BC857S

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BC857S

BC857S
E2 B2 C1

SC70-6
Mark: 3C
pin 1

C2 B1 E1

NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 68.

Absolute Maximum Ratings
Symbol
VCEO VCES VCBO VEBO IC TJ, Tstg Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage

TA 25 C unless otherwise noted

Parameter

Value
45 50 50 5.0 200 -55 to 150

Units
V V V V mA C

4

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Max
BC857S 300 2.4 415

Units
mW mW/ C C/W

1998 Fairchild Semiconductor Corporation

BC857S Datasheet Fairchild Download PDF

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BC857S DATASHEET