BC860

BC856- BC860 PNP Epitaxial Silicon Transistor

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BC856- BC860 PNP Epitaxial Silicon Transistor

August 2006

BC856- BC860
PNP Epitaxial Silicon Transistor Features
Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC859, BC860 Complement to BC846 ... BC850
2 1 3

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings
Symbol
VCBO Collector-Base Voltage

Ta 25 C unless otherwise noted

Parameter
: BC856 : BC857/860 : BC858/859

Value
-80 -50 -30 -65 -45 -30 -5 -100 310 150 -65 150

Units
V V V V V V V mA mW C C

VCEO

Collector-Emitter Voltage : BC856 : BC857/860 : BC858/859

VEBO IC PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol
ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob NF

Parameter
Collector Cut-off Current DC Current Gain

Test Condition
VCB -30V, IE 0 VCE -5V, IC -2mA

Min.
110

Typ.

Max.
-15 800

Units
nA

Collector-Emitter Saturation Voltage IC -10mA, IB -0.5mA IC -100mA, IB -5mA Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure : BC856/857/858 : BC859/860 : BC859 : BC860 IC -10mA, IB -0.5mA IC -100mA, IB -5mA VCE -5V, IC -2mA VCE -5V, IC -10mA VCE -5V, IC -10mA f 100MHz VCB -10V, IE 0, f 1MHz VCE -5V, IC -200 A RG 2K, f 1KHz VCE -5V, IC -200 A RG 2K, f 30 15000Hz -600

-90 -250 -700 -900 -660 150

-300 -650

mV mV mV mV

-750 -800

mV mV MHz

6 2 1 1.2 1.2 10 4 4 2

pF dB dB dB dB

Pulse Test: Pulse Width300 s, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BC856- BC860 Rev. B