BCP51

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BCP51

BCP51
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collecor currents to 1.0A. Sourced from process 77.
4

3 2 1

SOT-223 1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -45 -45 -5.0 -1.5 - 55 150 Units V V V A C

These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC -10mA, IB 0 IC -100 A, IE 0 IE -10 A, IC 0 VCB -30V, IE 0 VCB -30V, IE 0, Ta 125 C VEB -5.0V, IC 0 IC -5.0mA, VCE -2.0V IC -150mA, VCE -2.0 IC -500mA, VCE -2.0V IC -500mA, IB -50mA IC -500mA, VCE -2.0V 25 40 25 Min. -45 -45 -5.0 -100 -10 -10 Max. Units V V V nA A A Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cut-off Current DC Current Gain

On Characteristics 250 -0.5 -1.0 V V

VCE(sat) VBE(on)

Collector-Emitter Saturation Voltage Base-Emitter On Voltage

Thermal Characteristics Ta 25 C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Max. 1.0 8.0 125 Units W mW/ C C/W

Device mounted on FR-4PCB 36mm 18mm 1.5mm; mounting pad for the collector lead min. 6cm2.

2004 Fairchild Semiconductor Corporation

Rev. A, August 2004