BCP52

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BCP52

BCP52
C

E C B

SOT-223

PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
60 60 5.0 1.2 -55 to 150

Units
V V V A C

3

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Max
BCP52 1.5 12 83.3

Units
W mW/ C C/W

1997 Fairchild Semiconductor Corporation

BCP52 Datasheet Fairchild Download PDF

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BCP52 DATASHEET