BCP68

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BCP68

BCP68
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers. Sourced from process 37.
3 2 1 4

SOT-223 1. Base 2.4. Collector 3. Emitter

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC PD TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation - Derate above 25 C TA 25 C Value 20 30 5 1 1.5 12 - 55 150 Units V V V A Watts mW/ C C

Operating and Storage Junction Temperature Range

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CES V(BR)CEO V(BR)EBO ICBO IEBO hFE Parameter Test Conditions IC 100 A, IE 0 IC 1mA, IB 0 IE 10 A, IC 0 VCB 25V, IE 0, TA 25 C VCB 25V, IE 0, TA 125 C VEB 5V, IC 0 IC 5mA, VCE 10V IC 500mA, VCE 1V IC 1A, VCE 1V IC 1A, IB 100mA IC 1A, VCE 1V 50 85 60 Min. 25 20 5 10 1 10 Typ. Max. Units V V V A mA A Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain

On Characteristics (1) 375 0.5 1 V V

VCE(sat) VBE(on)

Collector-Emitter Saturation Voltage Base-Emitter On Voltage

2001 Fairchild Semiconductor Corporation

Rev. A, August 2001