BCV26

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BCV26

BCV26
C

E

SOT-23
Mark: FD

B

PNP Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
30 40 10 1.2 -55 to 150

Units
V V V A C

3

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Max
BCV26 350 2.8 357

Units
mW mW/ C C/W

Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

BCV26 Datasheet Fairchild Download PDF

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BCV26 DATASHEET