BCW30

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BCW30

BCW30
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.
3

2 1

SOT-23
Mark: C2

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VCES VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value -32 -32 -5.0 -500 -55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Parameter Test Condition IC -10 A, IE 0 IC -2.0mA, IB 0 IC -10 A, IE 0 IC -10 A, IC 0 VCB -32V, IE 0 VCB -32V, IE 0, TA 100 C VCE -5.0V, IC -2.0mA IC -10mA, IB -0.5mA VCE -5.0V, IC -2.0mA VCE -5.0V, IC -200 A RS 2.0k, f 1.0kHz BW 200Hz -0.6 215 Min. -32 -32 -32 -5.0 -100 -10 500 -0.3 -0.7 10 V V dB Typ. Max. Units V V V V nA A Off Characteristics Collector-Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)CES V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current

On Characteristics hFE VCE(sat) VBE(on) NF DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Noise Figure

Small Signal Characteristics

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Max. 350 2.8 357 Units mW mW/ C C/W

2002 Fairchild Semiconductor Corporation

Rev. B1, August 2002