BCW32

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BCW32

BCW32
NPN General Purpose Amplifier
This device is designed for general purpose applications at collector currents to 300mA. Sourced from process 10.
3

2 1

SOT-23
Mark: D2

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current (DC) Operating and Storage Junction Temperature Range Value 32 32 5.0 500 -55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Parameter Test Condition IC 2.0mA, IB 0 IC 10 A, IB 0 IC 10 A, IC 0 VCB 32V, IE 0 VCB 32V, IE 0, TA 100 C IC 2.0mA, VCE 5.0V IC 10mA, IB 0.5mA IC 2.0mA, VCE 5.0V IC 2.0mA, VCE 5.0V f 35MHz VCB 10V, IE 0, f 1.0MHz IC 0.2mA, VCE 5.0V RS 2.0k, f 1.0kHz BW 200Hz 0.55 200 4.0 10 pF dB 200 Min. 32 32 5.0 100 10 450 0.25 0.7 V V Typ. Max. Units V V V nA A Off Characteristics Collector-Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current

On Characteristics hFE VCE(sat) VBE(on) fT Cobo NF DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure

Small Signal Characteristics

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Max. 350 2.8 357 Units mW mW/ C C/W

Device mounted on FR-4PCB 40mm 40mm 1.5mm

2002 Fairchild Semiconductor Corporation

Rev. A, August 2002