BCW66G

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BCW66G

BCW66G
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 500mA. Sourced from process 13.
3

2 1

SOT-23
Mark: EG

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 45 75 5 1 - 55 150 Units V V V A C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICES IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC 10 A IC 10mA IE 10 A VCB 45V, IE 0 VCB 45V, IE 0 VEB 4V VCE 10V, IC 100 A VCE 1V, IC 10mA VCE 1V, IC 100mA VCE 2V, IC 500mA IC 100mA, IB 10mA IC 500mA, IB 50mA IC 500mA, IB 50mA VCB 10V, f 1MHz VEB 0.5V, f 1MHz VCE 10V, IC 20mA, f 100MHz VCE 5V, IC 0.2mA, RS 1k, f 1KHz, BW 200Hz IB1 IB2 15mA IC 150mA, RL 150 100 10 100 400 50 110 160 60 TA 150 C Min. 75 45 5 20 20 20 Typ. Max. Units V V V nA A nA

400 0.3 0.7 2 12 80 V V pF pF MHz dB ns

VCE(sat) VBE(sat) Cobo Cibo fT NF ton toff

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Input Capacitance Current gain Bandwidth Product Noise Figure Turn-On Time Turn-Off Time

2002 Fairchild Semiconductor Corporation

Rev. A1, August 2002