BCW71

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BCW71

BCW71
C

E

SOT-23
Mark: K1

B

NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.

Absolute Maximum Ratings
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage

TA 25 C unless otherwise noted

Parameter

Value
45 50 5.0 500 -55 to 150

Units
V V V mA C

3

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Max
BCW71 350 2.8 357

Units
mW mW/ C C/W

Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

BCW71 Datasheet Fairchild Download PDF

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BCW71 DATASHEET