BCX19

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BCX19

BCX19
NPN Medium Power Transistor
This device is designed for general purpose amplifiers. Sourced from process 38.
3

2 1

SOT-23
Mark: U1

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value 45 50 5.0 500 -55 150 Units V V V mW C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Parameter Test Condition IC 10mA, IB 0 IC 10 A, IC 0 VCB 20V, IE 0 VCB 20V, IE 0, TA 150 C VEB 5.0V, IC 0 IC 100mA, VCE 1.0V IC 300mA, VCE 1.0V IC 500mA, VCE 1.0V IC 500mA, IB 50mA IC 500mA, VCE 1.0V 100 70 40 Min. 45 50 100 5.0 10 600 Typ. Max. Units V V nA A A Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CES ICBO IEBO hFE Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain

On Characteristics

VCE(sat) VBE(on)

Collector-Emitter Saturation Voltage Base-Emitter On Voltage

0.62 1.2

V V

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Max. 300 2.4 417 Units mW mW/ C C/W

2002 Fairchild Semiconductor Corporation

Rev. A1, August 2002