BCX20

BCX20 NPN Epitaxial Silicon Transistor

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BCX20 NPN Epitaxial Silicon Transistor

January 2005

BCX20
NPN Epitaxial Silicon Transistor Switching and Amplifier Applications

2 1

SOT-23
Marking: U2

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings
Symbol
VCES VCEO VEBO IC PC TJ TSTG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature

Ta 25 C unless otherwise noted

Parameter

Value
30 25 5 800 310 150 -65 150

Units
V V V A W C C

Electrical Characteristics
Symbol
BVCEO BVCES BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on)

TC 25 C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current DC Current Gain

Conditions
IC 10mA, IB 0 IC 100 A, VBE 0 IE 10 A, IC 0 VCE 20V, VBE 0 VBE 5V, IC 0 VCE 1V, IC 100mA VCE 1V, IC 300mA VCE 1V, IC 500mA IC 500mA, IB 50mA VCE 1A, IB 500mA

Min.
25 30 5

Max

Units
V V V

100 10 100 70 40 600

nA nA

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.62 1.2

V V

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BCX20 Rev. A