BCX70H

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BCX70H

BCX70H
General Purpose Transistor
3

2 1

SOT-23

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature

1. Base 2. Emitter 3. Collector

Value 45 45 5 200 350 -55 150

Units V V V mA mW C

Refer to KST3904 for graphs

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO BVEBO ICES IEBO hFE Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC 2.0mA, IB 0 IE 1.0 A, IC 0 VCE 32V, VBE 0 VEB 4V, IC 0 VCE 5V, IC 10 A VCE 5V, IC 2.0mA VCE 1V, IC 50mA IC 10mA, IB 0.25mA IC 50mA, IB 1.25mA IC 10mA, IB 0.25mA IC 50mA, IB 1.25mA VCE 5V, IC 2.0mA VCE 5V, IC 10mA, f 100MHz VCE 10V, IE 0, f 1MHz VCE 5V, IC 0.2mA RS 2K, f 1KHz IC 10mA, IB1 1.0mA VBB 3.6V, IB2 1.0mA R1 R2 5K, RL 990 0.6 0.7 0.55 125 4.5 6 150 800 20 180 70 Min. 45 5 20 20 310 0.35 0.55 0.85 1.05 0.75 V V V V V MHz pF dB ns ns Max. Units V V nA nA

VCE (sat) VBE (sat) VBE (on) fT Cob NF tON tOFF

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time

Marking

2002 Fairchild Semiconductor Corporation

Rev. B2, December 2002