BD136/138/140

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BD136/138/140

BD136/138/140
Medium Power Linear and Switching Applications
Complement to BD135, BD137 and BD139 respectively

1

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD136 : BD138 : BD140 : BD136 : BD138 : BD140 Value - 45 - 60 - 80 - 45 - 60 - 80 -5 - 1.5 - 3.0 - 0.5 12.5 1.25 150 - 55 150 Units V V V V V V V A A A W W C C

VCEO

Collector-Emitter Voltage

VEBO IC ICP IB PC PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD136 : BD138 : BD140 Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC - 30mA, IB 0 Min. - 45 - 60 - 80 - 0.1 - 10 25 25 40 Typ. Max. Units V V V A A

ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on)

VCB - 30V, IE 0 VEB - 5V, IC 0 VCE - 2V, IC - 5mA VCE - 2V, IC - 0.5A VCE - 2V, IC - 150mA IC - 500mA, IB - 50mA VCE - 2V, IC - 0.5A

250 - 0.5 -1 V V

Collector-Emitter Saturation Voltage Base-Emitter ON Voltage

Pulse Test: PW 350 s, duty Cycle 2% Pulsed

hFE Classificntion
Classification hFE3 6 40 100 10 63 160 16 100 250

2000 Fairchild Semiconductor International

Rev. A, February 2000

BD136 Datasheet Fairchild Download PDF

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BD136 DATASHEET