BD135/137/139

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BD135/137/139

BD135/137/139
Medium Power Linear and Switching Applications
Complement to BD136, BD138 and BD140 respectively

1

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD135 : BD137 : BD139 : BD135 : BD137 : BD139 Value 45 60 80 45 60 80 5 1.5 3.0 0.5 12.5 1.25 150 - 55 150 Units V V V V V V V A A A W W C C

VCEO

Collector-Emitter Voltage

VEBO IC ICP IB PC PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD135 : BD137 : BD139 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : ALL DEVICE : ALL DEVICE : BD135 : BD137, BD139 Test Condition IC 30mA, IB 0 Min. 45 60 80 0.1 10 25 25 40 40 Typ. Max. Units V V V A A

ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on)

VCB 30V, IE 0 VEB 5V, IC 0 VCE 2V, IC 5mA VCE 2V, IC 0.5A VCE 2V, IC 150mA IC 500mA, IB 50mA VCE 2V, IC 0.5A

250 160 0.5 1 V V

Collector-Emitter Saturation Voltage Base-Emitter ON Voltage

hFE Classification
Classification hFE3
2000 Fairchild Semiconductor International

6 40 100

10 63 160

16 100 250
Rev. A, February 2000

BD139 Datasheet Fairchild Download PDF

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BD139 DATASHEET