BD159

BD157/158/159

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BD157/158/159

BD157/158/159
Low Power Fast Switching Output Stages
For T.V Radio Audio Output Amplifiers

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD157 : BD158 : BD159 : BD157 : BD158 : BD159 Value 275 325 375 250 300 350 5 0.5 1.0 0.25 20 50 - 65 150 Units V V V V V V V A A A W C C

VCEO

Collector-Emitter Voltage

VEBO IC ICP IB PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BD157 : BD158 : BD159 Collector Cut-off Current : BD157 : BD158 : BD159 IEBO hFE Emitter Cut-off Current DC Current Gain VCB 275V, IE 0 VCB 325V, IE 0 VCB 375V, IE 0 VEB 5V, IC 0 VCE 10V, IC 50mA 30 100 100 100 100 240 A A A A Test Condition IC 1mA, IB 0 Min. 250 300 350 Typ. Max. Units V V V

ICBO

Pulse Test: PW 300 s, duty Cycle 1.5% Pulsed

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001