BD176

BD176/178/180

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

BD176/178/180

BD176/178/180
Medium Power Linear and Switching Applications
Complement to BD 175/177/179 respectively

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD176 : BD178 : BD180 : BD176 : BD178 : BD180 Value - 45 - 60 - 80 - 45 - 60 - 80 -5 -3 -7 30 70 8.5 150 - 65 150 Units V V V V V V V A A W C/W C/W C C

VCEO

Collector-Emitter Voltage

VEBO IC IC PC Rja Rjc TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Junction to Ambient Junction to Case Junction Temperature Storage Temperature

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD176 : BD178 : BD180 Collector Cut-off Current : BD176 : BD178 : BD180 Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Test Condition IC - 100mA, IB 0 Min. - 45 - 60 - 80 - 100 - 100 - 100 -1 40 15 250 - 0.8 - 1.3 3 V V MHz Typ. Max. Units V V V A A A mA

ICBO

VCB - 45V, IE 0 VCB - 60V, IE 0 VCB - 80V, IE 0 VEB - 5V, IC 0 VCE - 2V, IC - 150mA VCE - 2V, IC - 1A IC -1 A , IB - 0.1A VCE - 2V, IC -1 A VCE -10V, IC - 250mA

IEBO hFE1 hFE2 VCE(sat) VBE(on) fT

Pulse Test: PW 300 s, duty Cycle 1.5% Pulsed

hFE Classificntion
Classification hFE1
Classification 16: Only BD 176
2002 Fairchild Semiconductor Corporation Rev. B1, October 2002

6 40 100

10 63 160

16 100 250