BD175/177/179

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BD175/177/179

BD175/177/179
Medium Power Linear and Switching Applications
Complement to BD 176/178/180 respectively

1

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD175 : BD177 : BD179 : BD175 : BD177 : BD179 Value 45 60 80 45 60 80 5 3 7 30 150 - 65 150 Units V V V V V V V A A W C C

VCEO

Collector-Emitter Voltage

VEBO IC ICP PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD175 : BD177 : BD179 Collector Cut-off Current : BD175 : BD177 : BD179 Test Condition IC 100mA, IB 0 Min. 45 60 80 100 100 100 1 40 15 250 0.8 1.3 3 V V MHz Typ. Max. Units V V V A A A mA

ICBO

VCB 45V, IE 0 VCB 60V, IE 0 VCB 80V, IE 0 VEB 5V, IC 0 VCE 2V, IC 150mA VCE 2V, IC 1A IC 1A, IB 0.1A VCE 2V, IC 1A VCE 10V, IC 250mA

IEBO hFE1 hFE2 VCE(sat) VBE(on) fT

Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product

Pulse Test: PW 300 s, duty Cycle 1.5% Pulsed

hFE Classificntion
Classification hFE1
Classification 16: Only BD175

6 40 100

10 63 160

16 100 250

2000 Fairchild Semiconductor International

Rev. A, February 2000

BD179 Datasheet Fairchild Download PDF

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BD179 DATASHEET