BD237

BD233/235/237

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BD233/235/237

BD233/235/237
Medium Power Linear and Switching Applications
Complement to BD 234/236/238 respectively

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD233 : BD235 : BD237 : BD233 : BD235 : BD237 : BD233 : BD235 : BD237 Value 45 60 100 45 60 80 45 60 100 5 2 6 25 150 - 65 150 Units V V V V V V V V V V A A W C C

VCEO

Collector-Emitter Voltage

VCER

Collector-Emitter Voltage

VEBO IC ICP PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD233 : BD235 : BD237 Collector Cut-off Current : BD233 : BD235 : BD237 IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product VCB 45V, IE 0 VCB 60V, IE 0 VCB 100V, IE 0 VEB 5V, IC 0 VCE 2V, IC 150mA VCE 2V, IC 1A IC 1A, IB 0.1A VCE 2V, IC 1A VCE 10V, IC 250mA 3 40 25 0.6 1.3 V V MHz 100 100 100 1 A A A mA Test Condition IC 100mA, IB 0 Min. 45 60 80 Typ. Max. Units V V V

ICBO

Pulse Test: PW 300 s, duty Cycle 1.5% Pulsed

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001