BD238

BD234/236/238

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BD234/236/238

BD234/236/238
Medium Power Linear and Switching Applications
Complement to BD 233/235/237 respectively

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD234 : BD236 : BD238 VCEO Collector-Emitter Voltage : BD234 : BD236 : BD238 Collector-Emitter Voltage : BD234 : BD236 : BD238 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature - 45 - 60 - 100 - 45 - 60 - 80 - 45 - 60 - 100 -5 -2 -6 25 150 - 65 150 V V V V V V V V V V A A W C C Value Units

VCER

VEBO IC ICP PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD234 : BD236 : BD238 Collector Cut-off Current : BD234 : BD236 : BD238 IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product VCB - 45V, IE 0 VCB - 60V, IE 0 VCB - 100V, IE 0 VEB - 5V, IC 0 VCE - 2V, IC - 150mA VCE - 2V, IC - 1A IC - 1A , IB - 0.1A VCE - 2V, IC - 1A VCE - 10V, IC -250mA 3 40 25 - 0.6 - 1.3 V V MHz - 100 - 100 - 100 -1 A A A mA Test Condition IC - 100mA, IB 0 Min. - 45 - 60 - 80 Typ. Max. Units V V V

ICBO

Pulse Test: PW 300 s, duty Cycle 1.5% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000