BD239C

BD239/A/B/C

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BD239/A/B/C

BD239/A/B/C
Medium Power Linear and Switching Applications
Complement to BD240/A/B/C respectively

TO-220 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO Parameter Collector-Emitter Voltage : BD239 : BD239A : BD239B : BD239C Collector-Emitter Voltage : BD239 : BD239A : BD239B : BD239C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

1.Base

Value 45 60 80 100 55 70 90 115 5 2 4 0.6 30 150 - 65 150

Units V V V V V V V V V A A A W C C

VCER

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD239 : BD239A : BD239B : BD239C Collector Cut-off Current : BD239/A : BD239B/C ICES Collector Cut-off Current : BD239 : BD239A : BD239B : BD239C IEBO hFE VCE(sat) VBE(on) Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage VCE 45V, VBE 0 VCE 60V, VBE 0 VCE 80V, VBE 0 VCE 100V, VBE 0 VEB 5V, IC 0 VCE 4V, IC 0.2A VCE 4V, IC 1A IC 1A, IB 0.2A VCE 4V, IC 1A 40 15 0.7 1.3 V V 0.2 0.2 0.2 0.2 1 mA mA mA mA mA VCE 30V, IB 0 VCE 60V, IB 0 0.3 0.3 mA mA Test Condition IC 30mA, IB 0 Min. 45 60 80 100 Typ. Max. Units V V V V

ICEO

Pulse Test: PW 350 s, duty Cycle2.0% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000