BD240

BD240/A/B/C

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BD240/A/B/C

BD240/A/B/C
Medium Power Linear and Switching Applications
Complement to BD239/A/B/C respectively

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO Parameter Collector-Base Voltage : BD240 : BD240A : BD240B : BD240C VCER Collector-Emitter Voltage : BD240 : BD240A : BD240B : BD240C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( TC 25 C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 55 - 70 - 90 - 115 -5 -2 -4 - 0.6 30 150 - 65 150 V V V V V V V V V A A A W C C Value Units

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD240 : BD240A : BD240B : BD240C Collector Cut-off Current Collector Cut-off Current : BD240/A : BD240B/C : BD240 : BD240A : BD240B : BD240C Test Condition IC - 30mA, IB 0 Min. - 45 - 60 - 80 - 100 - 0.3 - 0.3 - 0.2 - 0.2 - 0.2 - 0.2 -1 40 15 - 0.7 - 1.3 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA

ICEO ICES

VCE - 30V, IB 0 VCE - 60V, IB 0 VCE - 45V, VBE 0 VCE - 60V, VBE 0 VCE - 80V, VBE 0 VCE - 100V, VBE 0 VEB - 5V, IC 0 VCE - 4V,IC - 0.2A VCE - 4V, IC - 1A IC - 1A , IB - 0.2A VCE - 4V, IC - 1A

IEBO hFE VCE(sat) VBE(on)

Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage

Pulse Test: PW 350 s, duty Cycle2.0% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000