BD241B

BD241/A/B/C

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BD241/A/B/C

BD241/A/B/C
Medium Power Linear and Switching Applications
Complement to BD242/A/B/C respectively TO-220 2.Collector 3.Emitter

1.Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO Parameter Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value 45 60 80 100 55 70 90 115 5 3 5 1 40 150 - 65 150 Units V V V V V V V V V A A A W C C

VCER

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD241 : BD241A : BD241B : BD241C Collector Cut-off Current Collector Cut-off Current : BD241/A : BD241B/C : BD241 : BD241A : BD241B : BD241C Test Condition IC - 30mA, IB 0 Min. 45 60 80 100 0.3 0.3 0.2 0.2 0.2 0.2 1 25 10 1.2 1.8 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA

ICEO ICES

VCE 30V, IB 0 VCE 60V, IB 0 VCE 45V, VBE 0 VCE 60V, VBE 0 VCE 80V, VBE 0 VCE 100V, VBE 0 VEB 5V, IC 0 VCE 4V, IC 1A VCE 4V, IC 3A IC 3A, IB 0.6A VCE 4V, IC 3A

IEBO hFE VCE(sat) VBE(on)

Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage

Pulse Test: PW 350 s, duty Cycle2% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000