BD242C

BD242/A/B/C

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BD242/A/B/C

BD242/A/B/C
Medium Power Linear and Switching Applications
Complement to BD241/A/B/C respectively

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO Parameter Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value - 45 - 60 - 80 - 100 - 55 - 70 - 90 - 115 -5 -3 -5 -1 40 150 - 65 150 Units V V V V V V V V V A A A W C C

VCER

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD242 : BD242A : BD242B : BD242C Collector Cut-off Current Collector Cut-off Current : BD242/A : BD242B/C : BD242 : BD242A : BD242B : BD242C Test Condition IC - 30mA, IB 0 Min. - 45 - 60 - 80 - 100 - 0.3 - 0.3 - 0.2 - 0.2 - 0.2 - 0.2 -1 25 10 - 1.2 - 1.8 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA

ICEO ICES

VCE - 30V, IB 0 VCE - 60V, IB 0 VCE - 45V, VBE 0 VCE - 60V, VBE 0 VCE - 80V, VBE 0 VCE - 100V, VBE 0 VEB - 5V, IC 0 VCE - 4V, IC - 1A VCE - 4V, IC - 3A IC - 3A, IB - 0.6A VCE - 4V, IC - 3A

IEBO hFE VCE(sat) VBE(on)

Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage

Pulse Test: PW 300 s, duty Cycle2% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000