BD243A

BD243/A/B/C

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BD243/A/B/C

BD243/A/B/C
Medium Power Linear and Switching Applications
Complement to BD244, BD244A, BD244B and BD244C respectively

TO-220 2.Collector 3.Emitter

1.Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C VCEO Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 5 6 10 2 65 150 - 65 150 V V V V V V V V V A A A W C C Value Units

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C Collector Cut-off Current Collector Cut-off Current : BD243/243A : BD243B/243C : BD243 : BD243A : BD243B : BD243C Test Condition IC 30mA, IB 0 Min. 45 60 80 100 0.7 0.7 0.4 0.4 0.4 0.4 1 30 15 1.5 2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA

ICEO ICES

VCE 30V, IB 0 VCE 60V, IB 0 VCE 45V, VBE 0 VCE 60V, VBE 0 VCE 80V, VBE 0 VCE 100V, VBE 0 VEB 5V, IC 0 VCE 4V, IC 0.3A VCE 4V, IC 3A IC 6A, IB 1A VCE 4V, IC 6A

IEBO hFE VCE(sat) VBE(on)

Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage

Pulse Test :PW 300 s, duty Cycle 20% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000