BD244A

BD244/A/B/C

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BD244/A/B/C

BD244/A/B/C
Medium Power Linear and Switching Applications
Complement to BD243, BD243A, BD243B and BD243C respectively

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD244 : BD244A : BD244B : BD244C VCEO Collector-Emitter Voltage : BD244 : BD244A : BD244B : BD244C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 -5 -6 - 10 -2 65 150 - 65 150 V V V V V V V V V A A A W C C Value Units

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD244 : BD244A : BD244B : BD244C Collector Cut-off Current Collector Cut-off Current : BD244/244A : BD244B/244C : BD244 : BD244A : BD244B : BD244C Test Condition IC - 30mA, IB 0 Min. - 45 - 60 - 80 - 100 - 0.7 - 0.7 - 0.4 - 0.4 - 0.4 - 0.4 -1 30 15 - 1.5 -2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA

ICEO ICES

VCE - 30V, IB 0 VCE - 60V, IB 0 VCE - 45V, VBE 0 VCE - 60V, VBE 0 VCE - 80V, VBE 0 VCE - 100V, VBE 0 VEB - 5V, IC 0 VCE - 4V, IC - 0.3A VCE - 4V, IC - 3A IC - 6A, IB - 1A VCE - 4V, IC - 6A

IEBO hFE VCE(sat) VBE(on)

Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage

Pulse Test: PW 300 s, duty Cycle 2% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000