BD375/377/379

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BD375/377/379

BD375/377/379
Medium Power Linear and Switching Applications
Complement to BD376, BD378 and BD380 respectively

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BD375 : BD377 : BD379

1

TO-126 2.Collector 3.Base

1. Emitter

Value 50 75 100 45 60 80 5 2 3 1 25 150 - 55 150

Units V V V V V V V A A A W C C

VCEO

Collector-Emitter Voltage : BD375 : BD377 : BD379 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD375 : BD377 : BD379 Collector-Base Breakdown Voltage Collector Cut-off Current : BD375 : BD377 : BD379 : BD375 : BD377 : BD379 Test Condition IC 100mA, IB 0 Min. 45 60 80 50 75 100 2 2 2 100 40 20 375 1 1.5 50 500 V V ns ns Typ. Max. Units V V V V V V A A A A

BVCBO

IC 100 A, IE 0

ICBO

VCB 45V, IE 0 VCB 60V, IE 0 VCB 80V, IE 0 VEB 5V, IC 0 VCE 2V, IC 0.15A VCE 2V, IC 1A IC 1A, IB 0.1A VCE 2V, IC 1A VCC 30V, IC 0.5A IB1 - IB2 0.05A RL 60

IEBO hFE1 hFE2 VCE(sat) VBE(on) tON tOFF

Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Turn ON Time Turn OFF Time

Pulse Test: PW 350 s, duty Cycle 2% Pulsed

hFE Classification
Classification hFE1
2000 Fairchild Semiconductor International

6 40 100

10 63 160

16 100 250

25 150 375
Rev. A, February 2000

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BD375 DATASHEET