BD376/378/380

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BD376/378/380

BD376/378/380
Medium Power Linear and Switching Applications
Complement to BD375, BD377 and BD379 respectively

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380

1

TO-126 2.Collector 3.Base

1. Emitter

Value - 50 - 75 - 100 - 45 - 60 - 80 -5 -2 -3 -1 25 150 - 55 150

Units V V V V V V V A A A W C C

VCEO

Collector-Emitter Voltage : BD376 : BD378 : BD380 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD376 : BD378 : BD380 Collector-Base Breakdown Voltage Collector Cut-off Current : BD376 : BD378 : BD380 : BD376 : BD378 : BD380 Test Condition IC - 100mA, IB 0 Min. - 45 - 60 - 80 - 50 - 75 - 100 -2 -2 -2 - 100 40 20 375 -1 - 1.5 50 500 V V ns ns Typ. Max. Units V V V V V V A A A A

BVCBO

IC - 100 A, IE 0

ICBO

VCB - 45V, IE 0 VCB - 60V, IE 0 VCB - 80V, IE 0 VEB - 5V, IC 0 VCE - 2V, IC - 0.15A VCE - 2V, IC - 1A IC - 1A, IB - 0.1A VCE - 2V, IC -1A VCC - 30V, IC - 0.5A IB1 - IB2 - 0.05A RL 60

IEBO hFE1 hFE2 VCE(sat) VBE(on) tON tOFF

Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Turn ON Time Turn OFF Time

Pulse Test: PW 350 s, duty Cycle 2% Pulsed

hFE Classificntion
Classification hFE1
2000 Fairchild Semiconductor International

6 40 100

10 63 160

16 100 250

25 150 375
Rev. A, February 2000

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BD376 DATASHEET