BD435

BD433/435/437

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BD433/435/437

BD433/435/437
Medium Power Linear and Switching Applications
Complement to BD434, BD436 and BD438 respectively

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD433 : BD435 : BD437 VCES Collector-Emitter Voltage : BD433 : BD435 : BD437 Collector-Emitter Voltage : BD433 : BD435 : BD437 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature 22 32 45 22 32 45 22 32 45 5 4 7 1 36 150 - 65 150 V V V V V V V V V V A A A W C C Value Units

VCEO

VEBO IC ICP IB PC TJ TSTG

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001