BD436

BD434/436/438

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BD434/436/438

BD434/436/438
Medium Power Linear and Switching Applications
Complement to BD433, BD435 and BD437 respectively

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD434 : BD436 : BD438 VCES Collector-Emitter Voltage : BD434 : BD436 : BD438 Collector-Emitter Voltage : BD434 : BD436 : BD438 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature - 22 - 32 - 45 - 22 - 32 - 45 - 22 - 32 - 45 -5 -4 -7 -1 36 150 - 65 150 V V V V V V V V V V A A A W C C Value Units

VCEO

VEBO IC ICP IB PC TJ TSTG

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001