BD439/441

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BD439/441

BD439/441
Medium Power Linear and Switching Applications
Complement to BD440, BD442 respectively

1

TO-126 2.Collector 3.Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD439 : BD441 VCES Collector-Emitter Voltage : BD439 : BD441 Collector-Emitter Voltage : BD439 : BD441 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

1. Emitter

Value 60 80 60 80 60 80 5 4 7 1 36 150 - 65 150

Units V V V V V V V A A A W C C

VCEO

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD439 : BD441 Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 Test Condition IC 100mA, IB 0 VCB 60V, IE 0 VCB 80V, IE 0 VCE 60V, VBE 0 VCE 80V, VBE 0 VEB 5V, IC 0 VCE 5V, IC 10mA VCE 1V, IC 500mA VCE 1V, IC 2A IC 2A, IB 0.2A VCE 5V, IC 10mA VCE 1V, IC 2A VCE 1V, IC 250mA 3 0.58 1.5 20 15 40 40 25 15 130 130 140 140 Min. 60 80 100 100 100 100 1 Typ. Max. Units V V A A A A mA

ICBO ICES IEBO hFE

VCE(sat) VBE(on) fT

Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product

0.8

V V V MHz

Pulse Test: PW 300 s, duty Cycle 1.5% Pulsed

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

BD439 Datasheet Fairchild Download PDF

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BD439 DATASHEET