BD440/442

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BD440/442

BD440/442
Medium Power Linear and Switching Applications
Complement to BD439, BD441 respectively

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD440 : BD442 VCES Collector-Emitter Voltage : BD440 : BD442 Collector-Emitter Voltage : BD440 : BD442 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

1

TO-126 2.Collector 3.Base

1. Emitter

Value - 60 - 80 - 60 - 80 - 60 - 80 -5 -4 -7 -1 36 150 - 65 1 50

Units V V V V V V V A A A W C C

VCEO

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD440 : BD442 Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain : BD440 : BD442 : BD440 : BD442 : BD440 : BD442 : BD440 : BD442 : BD440 : BD442 Test Condition IC - 100mA, IB 0 VCB - 60V, IE 0 VCB - 80V, IE 0 VCE - 60V, VBE 0 VCE - 80V, VBE 0 VEB - 5V, IC 0 VCE - 5V, IC - 10mA VCE - 1V, IC - 500mA VCE - 1V, IC - 2A IC - 2A, IB - 0.2A VCE - 5V, IC - 10mA VCE -1 V, IC - 2A VCE - 1V, IC - 250mA 3 -0.58 - 1.5 20 15 40 40 25 15 140 140 140 140 Min. -60 -80 - 100 - 100 - 100 - 100 -1 Typ. Max. Units V V A A A A mA

ICBO ICES IEBO hFE

VCE(sat) VBE(on) fT

Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product

- 0.8

V V V MHz

Pulse Test: PW 300 s, duty Cycle 1.5% Pulsed

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

BD442 Datasheet Fairchild Download PDF

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BD442 DATASHEET