BD533/535/537

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BD533/535/537

BD533/535/537
Medium Power Linear and Switching Applications
Low Saturation Voltage Complement to BD534, BD536 and BD538 respectively
1

TO-220 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD533 : BD535 : BD537 : BD533 : BD535 : BD537 : BD533 : BD535 : BD537

1.Base

Value 45 60 80 45 60 80 45 60 80 5 8 1 50 150 - 65 150

Units V V V V V V V V V V A A W C C

VCES

Collector-Emitter Voltage

VCEO

Collector-Emitter Voltage

VEBO IC IB PC TJ TSTG

Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO Parameter Collector Cut-off Current : BD533 : BD535 : BD537 Collector Cut-off Current : BD533 : BD535 : BD537 Emitter Cut-off Current DC Current Gain : BD533/535 : BD537 : ALL DEVICE : BD533/535 : BD537 : ALL DEVICE : ALL DEVICE Test Condition VCB 45V, IE 0 VCB 60V, IE 0 VCB 80V, IE 0 VCE 45V, VBE 0 VCE 60V, VBE 0 VCE 80V, VBE 0 VEB 5V, IC 0 VCE 5V, IC 10mA VCE 2V, IC 500mA VCE 2V, IC 2A 20 15 40 25 15 30 15 40 20 0.8 1.5 3 12 75 100 0.8 V V V MHz Min. Typ. Max. 100 100 100 100 100 100 1 Units A A A A A A mA

ICES

IEBO hFE

hFE

hFE Groups J K

VCE 2V, IC 2A VCE 2V, IC 3A VCE 2V, IC 2A VCE 2V, IC 3A IC 2A, IB 0.2A IC 6A, IB 0.6A VCE 2V, IC 2A VCE 1V, IC 500mA

VCE(sat) VBE(on) fT

Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product

Pulse Test: PW 300 s, duty Cycle 1.5% Pulsed
2000 Fairchild Semiconductor International Rev. A, February 2000

BD535 Datasheet Fairchild Download PDF

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