BD534/536/538

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BD534/536/538

BD534/536/538
Medium Power Linear and Switching Applications
Low Saturation Voltage Complement to BD533, BD535 and BD537 respectively
1

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD534 : BD536 : BD538 : BD534 : BD536 : BD538 Value - 45 - 60 - 80 - 45 - 60 - 80 -5 -8 -1 50 150 - 65 150 Units V V V V V V V A A W C C

VCEO

Collector-Emitter Voltage

VEBO IC IB PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO Parameter Collector Cut-off Current : BD534 : BD536 : BD538 : BD534 : BD536 : BD538 Test Condition VCB - 45V, IE 0 VCB - 60V, IE 0 VCB - 80V, IE 0 VCE - 45V, VBE 0 VCE - 60V, VBE 0 VCE - 80V, VBE 0 VEB - 5V, IC 0 VCE -2 V, IC - 500mA VCE - 5V, IC - 10mA VCE - 2V, IC - 2A 40 20 15 25 15 30 15 40 20 - 0.8 - 1.5 3 12 75 100 - 0.8 V V V MHz Min. Typ. Max. - 100 - 100 - 100 - 100 - 100 - 100 -1 Units A A A A A A mA

ICES

Collector Cut-off Current

IEBO hFE

Emitter Cut-off Current DC Current Gain : ALL DEVICE : BD534/536 : BD538 : BD534/536 : BD538 : ALL DEVICE : ALL DEVICE

hFE

hFE Groups J K

VCE - 2V, IC - 2A VCE - 2V, IC - 3A VCE -2V, IC - 2A VCE - 2V, IC - 3A IC - 2A, IB - 0.2A IC - 6A, IB - 0.6A VCE - 2V, IC - 2A VCE - 1V, IC - 500mA

VCE(sat) VBE(on) fT

Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product

Pulse Test: PW 300 s, duty Cycle 1.5% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000

BD538 Datasheet Fairchild Download PDF

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BD538 DATASHEET