BD680A

BD676A/678A/680A/682

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BD676A/678A/680A/682

BD676A/678A/680A/682
Medium Power Linear and Switching Applications
Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BD676A : BD678A : BD680A : BD682

TO-126 2.Collector 3.Base

1. Emitter

Value - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 -5 -4 -6 - 100 14 88 150 - 65 150

Units V V V V V V V V V A A mA W C/W C C

VCEO

Collector-Emitter Voltage : BD676A : BD678A : BD680A : BD682 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Thermal Resistance (Junction to Ambient) Junction Temperature Storage Temperature

VEBO IC ICP IB PC Rja TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD676A : BD678A : BD680A : BD682 Collector-Base Voltage : BD676A : BD678A : BD680A : BD682 Test Condition IC - 50mA, IB 0 Min. - 45 - 60 - 80 - 100 - 200 - 200 - 200 - 200 - 500 - 500 - 500 - 500 -2 750 750 - 2.8 - 2.5 - 2.5 - 2.5 V V V V A A A A A A A A mA Typ. Max. Units

ICBO

VCB - 45V, IE 0 VCB - 60V, IE 0 VCB - 80V, IE 0 VCB - 100V, VBE 0 VCE - 45V, VBE 0 VCE - 60V, VBE 0 VCE - 80V, VBE 0 VCE - 100V, VBE 0 VEB - 5V, IC 0 VCE - 3V, IC - 2A VCE - 3V, IC - 1.5A IC - 2A, IB - 40mA IC - 1.5A, IB - 30mA VCE - 3V, IC - 2A VCE - 3V, IC - 1.5A

ICEO

Collector Cut-off Current : BD676A : BD678A : BD680A : BD682 Emitter Cut-off Current DC Current Gain : BD676A/678A/680A : BD682

IEBO hFE VCE(sat)

Collector-Emitter Saturation Voltage : BD676A/678A/680A : BD682 Base-Emitter On Voltage : BD676A/678A/680A : BD682

VBE(on)

Pulse Test: PW 300 s, duty Cycle 1.5% Pulse
2002 Fairchild Semiconductor Corporation Rev. B, September 2002