BDW93CF

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BDW93CF

BDW93CF
Hammer Drivers, Audio Amplifiers Applications
Power Darlington TR Complement to BDW94CF respectively

TO-220F 2.Collector 3.Emitter

1.Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value 100 100 12 15 0.2 30 150 - 65 150 Units V V A A A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO(sus) ICBO ICEO IEBO hFE Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC 100mA, IB 0 VCB 100V, IE 0 VCE 100V, IB 0 VEB 5V, IC 0 VCE 3V, IC 3A VCE 3V, IC 5A VCE 3V, IC 10A IC 5A, IB 20mA IC 10A, IB 100mA IC 5A, IB 20mA IC 10A, IB 100mA IF 5A IF 10A 1.3 1.8 1000 750 100 Min. 100 Typ. Max. 100 1 2 20000 2 3 2.5 4 2 4 V V V V V V Units V A mA mA

VCE(sat) VBE(sat) VF

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Parallel Diode Forward Voltage

Pulse Test: PW 300 s, duty Cycle 1.5% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000