BDW94/C PNP Epitaxial Silicon Transistor

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BDW94/C PNP Epitaxial Silicon Transistor

January 2005

BDW94/C
PNP Epitaxial Silicon Transistor Power Linear and Switching Application
Power Darlington TR Complement to BDW93 and BDW93C Respectively

1

TO-220 2.Collector 3.Emitter

1.Base

Absolute Maximum Ratings
Symbol
VCBO Collector-Base Voltage

Ta 25 C unless otherwise noted

Parameter
: BDW94 : BDW94C

Value
-45 -100 -45 -100 -12 -15 -0.2 80 150 -65 150

Units
V V V V A A A W C C

VCEO

Collector-Emitter Voltage : BDW94 : BDW94C

IC ICP IB PC TJ TSTG

Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

BDW94/C Rev. B

BDW94C Datasheet Fairchild Download PDF

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BDW94C DATASHEET