BDW94CF

BDW94CF PNP Epitaxial Silicon Transistor

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BDW94CF PNP Epitaxial Silicon Transistor

July 2005

BDW94CF
PNP Epitaxial Silicon Transistor
Power Linear and Switching Application
Power Darlington TR Complement to BDW93CF Respectively

TO-220F 2.Collector 3.Emitter

1.Base

Absolute Maximum Ratings
Symbol
VCBO VCEO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Current (Pulse) Base Current

Ta 25 C unless otherwise noted

Parameter

Value
-100 -100 -12 -15 -0.2 30 150 -65 150

Units
V V A A A W C C

Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature
TC 25 C unless otherwise noted

Electrical Characteristics
Symbol
VCEO(sus) ICBO ICEO IEBO hFE

Parameter
Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Conditions
IC -100mA, IB 0 VCB -100V, IE 0 VVCE -100V, IB 0 VEB -5V, IC 0 VCE -3V, IC -3A VCE -3V, IC -5A VCE -3V, IC -10A IC -5A, IB -20mA IC -10A, IB -100mA IC -5A, IB -20mA IC -10A, IB -100mA IF -5A IF -10A

Min.
-100

Typ.

Max
-100 -1 -2

Units
V A mA mA

1000 750 100

20000 -2 -3 -2.5 -4 -1.3 -1.8 -2 -4 V V V V V V

VCE(sat) VBE(sat) VF

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Parallel Diode Forward Voltage

Pulse Test: PW 300 s, Duty Cycle 1.5% Pulsed

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BDW94CF Rev. A