BDX33B

BDX33/A/B/C

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BDX33/A/B/C

BDX33/A/B/C
Power Linear and Switching Applications
High Gain General Purpose Power Darlington TR Complement to BDX34/34A/34B/34C respectively
1

TO-220 2.Collector 3.Emitter

1.Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 10 15 0.25 70 150 - 65 150 V V V V V V V V A A A W C C Value Units

IC ICP IB PC TJ TSTG

2000 Fairchild Semiconductor International

Rev. A, February 2000