BDX34B

BDX34/A/B/C

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BDX34/A/B/C

BDX34/A/B/C
Power Linear and Switching Applications
High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C respectively
1

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BDX34 : BDX34A : BDX34B : BDX34C VCEO Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 - 10 - 15 - 0.25 70 150 - 65 150 V V V V V V V V A A A W C C Value Units

IC ICP IB PC TJ TSTG

2000 Fairchild Semiconductor International

Rev. A, February 2000