BF199

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BF199

BF199
NPN RF Transistor

TO-92

1. Collector 2. Emitter 3. Base

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 25 40 4.0 50 - 55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICES hFE VCE(sat) VBE(sat) VBE(on) fT Cre Parameter Test Condition IC 1.0mA, IB 0 IC 100 A, IE 0 IE 10 A, IC 0 VCE 30V, IE 0 IC 7.0mA, VCE 10V IC 10mA, IB 5.0mA IC 10mA, IB 5.0mA IC 7.0mA, VCE 10V IC 7.0mA, VCE 10V, f 100MHz VCB 10V, IE 0, f 1.0MHz 38 0.2 0.92 0.925 1100 0.4 V V V MHz pF Min. 25 40 4.0 50 Max. Units V V V nA Collector-Emitter Breakdown Voltage Collector-Base BreakdownVoltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current gain Bandwidth Product Common-Emitter Ruerse Transfer Capacitance

On Characteristics

Small Signal Characteristics

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/ C C/W C/W

2002 Fairchild Semiconductor Corporation

Rev. A, September 2002