BF245A/BF245B/BF245C

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BF245A/BF245B/BF245C

BF245A/BF245B/BF245C
N-Channel Amplifiers
This device is designed for VHF/UHF amplifiers. Sourced from process 50.

1

TO-92

1. Gate 2. Source 3. Drain

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VDG VGS IGF PD TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Device Dissipation TA 25 C Derate above 25 C Operating and Storage Junction Temperature Range Value 30 -30 10 350 2.8 - 55 150 Units V V mA mW mW/ C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Parameter Test Condition VDS 0, IG 1 A VDS 15V, ID 200 A Min. -30 -0.4 -1.6 -3.2 -0.5 -2.2 -3.8 -7.5 -8 -5 Max. Units V V Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage VGS Gate-Source BF245A BF245B BF245C

VGS(off) IGSS

Gate-Source Cut-off Voltage Gate Reverse Current

VDS 15V, ID 10nA VGS -20V, VGS 0

V nA

On Characteristics IDSS Zero-Gate Voltage Drain Current BF245A BF245B BF245C On Characteristics Common Source Forward gfs Transconductance

VGS 15V, VGS 0

2 6 12 3

6.5 15 25 6.5

mA

VGS 15V, VGS 0, f 1KHz

mmhos

2003 Fairchild Semiconductor Corporation

Rev. A1, June 2003

BF245C Datasheet Fairchild Download PDF

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BF245C DATASHEET