BF494

BF494 NPN RF Transistor

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BF494 NPN RF Transistor

July 2006

BF494
NPN RF Transistor

TO-92 1. Collector 2. Emitter 3. Base
Ta 25 C unless otherwise noted

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Junction Temperature Storage Temperature Range

Parameter

Value
20 30 5.0 30 150 - 55 150

Unit
V V V mA C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics
Symbol
PD RJC RJA

Parameter
Total Device Dissipation, by RJA Derate above 25 C Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient
TC 25 C unless otherwise noted

Value
350 2.8 125 357

Unit
mW mW/ C C/W C/W

Electrical Characteristics
Symbol
V(BR)CEO V(BR)CBO V(BR)EBO ICES hFE VCE(sat) VBE(sat) VBE(ON)

Parameter
Collector-Emitter Breakdown Voltage Collector-Base BreakdownVoltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage

Conditions
IC 1.0mA, IB 0 IC 10 A, IE 0 IE 10 A, IC 0 VCE 40V, VEB 0V VCE 10V, IC 1mA IC 10mA, IB 5mA IC 10mA, IB 5mA VCE 10V, IC 10mA

Min.
20 30 5.0

Max.

Units
V V V

10 67 222 0.2 0.92 650 740

V V mV

DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BF494 Rev. A