BS170

April 1995

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April 1995

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor

General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features
High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID PD TJ,TSTG TL Parameter Drain-Source Voltage

T A 25 C unless otherwise noted

BS170 60 60 20 500 1200 830 6.6 -55 to 150 300

MMBF170

Units V V V

Drain-Gate Voltage (RGS 1M) Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Derate Above 25 C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds

500 800 300 2.4

mW mW/ C C C

THERMAL CHARACTERISTICS RJA Thermal Resistacne, Junction-to-Ambient 150 417 C/W

1997 Fairchild Semiconductor Corporation

BS170 Rev. C / MMBF170 Rev. D