BSP50

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BSP50

BSP50
NPN Darlington Transistor
This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process 03.
2 1 4

SOT-223

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCER VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 45 60 5 800 - 55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CBO V(BR)EBO ICES IEBO hFE VCE(sat) VBE(sat) Parameter Test Conditions IC 100 A, IE 0 IE 10 A, IC 0 VCE 45V, VBE 0 VEB 4.0V, IC 0 IC 150mA, VCE 10V IC 500mA, VCE 10V IC 500mA, IB 0.5mA IC 500mA, IB 0.5mA 1000 2000 1.3 1.9 V V Min. 60 5 50 50 Typ. Max. Units V V nA nA Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

On Characteristics

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Max. 1000 8.0 125 Units mW mW/ C C/W

2004 Fairchild Semiconductor Corporation

Rev. A, May 2004