BSP52

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

BSP52

BSP52
NPN Darlington Transistor
This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process 03.
2 1 4

SOT-223

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings TA 25 C unless otherwise noted
Symbol VCES VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 80 90 5 800 - 55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TA 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CBO V(BR)EBO ICES IEBO hFE VCE(sat) VBE(sat) Parameter Test Conditions IC 100 A, IE 0 IE 10 A, IC 0 VCE 80V, VBE 0 VEB 4.0V, IC 0 IC 150mA, VCE 10V IC 500mA, VCE 10V IC 500mA, IB 0.5mA IC 500mA, IB 0.5mA 1000 2000 1.3 1.9 V V Min. 90 5 10 10 Typ. Max. Units V V A A Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

On Characteristics

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient Max. 1000 8.0 125 Units mW mW/ C C/W

2002 Fairchild Semiconductor Corporation

Rev. A, June 2002