BSR50

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BSR50

BSR50
NPN Darlington Transistor
This device designed for applications requiring extremely high gain at collector currents to 0.5A. Sourced from Process 06.

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TA 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Ratings 45 60 5 1.5 -55 150 Units V V V A C

Electrical Characteristics TA 25 C unless otherwise noted
Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC 10mA, IB 0 IC 100 A, IB 0 IE 100 A, IC 0 VCB 45V, IE 0 VEB 4.0V, IC 0 VCE 10V, IC 150mA VCE 10V, IC 0.5A IC 500mA, IB 500 A IC 1.0A, IB 4.0mA IC 500mA, IB 500 A IC 1.0mA, IB 4.0mA 1,000 2,000 1.3 1.6 0.9 2.2 V V Min. 45 60 5 50 50 Typ. Max. Units V V V nA nA

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/ C C/W C/W

2002 Fairchild Semiconductor Corporation

Rev. A, May 2002