BSR58

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BSR58

BSR58
N-Channel Low-Frequency Low-Noise Amplifier
This device is designed for low-power chopper or switching application sourced from process 51
2

SOT-23 Mark: M6 1. Drain 2. Source 3. Gate
1

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VDGO VGSO IGF Ptot TSTG TJ Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Power Dissipation up to Tamb 40 C Storage Temperature Range Junction Temperature Value 40 - 40 50 250 - 55 150 150 Units V V mA mW C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVGSS IGSS IDSS VGS(off) VDS(on) rds(on) Crss td tr toff Parameter Gate-Source Voltage Gate Reverse Current Zero-Gate Voltage Drain Current Gate-Source Cut-off Voltage Drain-Source On Voltage Drain-Source On Reverse Reverse Transfer Capacitance Delay Time Rise Time Turn-off Time Test Condition VDS 0V, IC 1 A VGS 20V VDS 15V, VGS 0V VDS 15V, ID 0.5nA VGS 0V, ID 5mA VGS 0V, ID 0 VDS 0V, VGS 10V VDD 10V, VGS(on) 0V ID 10mA, VGS(off) 10V 8 0.8 Min. 40 Typ. Max. 1 80 4 0.4 60 5 10 10 100 Units V nA mA V V pF nS nS nS

2002 Fairchild Semiconductor Corporation

Rev. A1, November 2002