BSS123

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BSS123

June 2003

BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features
0.17 A, 100 V. RDS(ON) 6 VGS 10 V RDS(ON) 10 VGS 4.5 V High density cell design for extremely low RDS(ON) Rugged and Reliable Compact industry standard SOT-23 surface mount package

D

D

S
G S

SOT-23

G
TA 25oC unless otherwise noted

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation Derate Above 25 C

Parameter

Ratings
100 20
(Note 1)

Units
V V A W mW/ C C

0.17 0.68 0.36 2.8 -55 to 150 300

(Note 1)

Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds

Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1)

350

C/W

Package Marking and Ordering Information
Device Marking SA Device BSS123 Reel Size 7 Tape width 8mm Quantity 3000 units

2003 Fairchild Semiconductor Corporation

BSS123 Rev G(W)

BSS123 Datasheet Fairchild Download PDF

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BSS123 DATASHEET