BSS64

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BSS64

BSS64
C

E

SOT-23
Mark: U3

B

NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
80 120 5.0 200 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Max
BSS64 350 2.8 357

Units
mW mW/ C C/W

Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

BSS64 Datasheet Fairchild Download PDF

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BSS64 DATASHEET